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mar. 2002 ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type BCR20KM outline drawing dimensions in mm to-220fn application vacuum cleaner, light dimmer, copying machine, other control of motor and heater i t (rms) ................................................................ 20a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # .................................... 20ma v iso ................................................................. 2000v ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 20 200 167 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=85 c 60hz sinewave 1 full cycle, peak value, non-repetitive typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 12 600 720 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? 2.0 ! @ # ! @ # min. 0.2 10 ma v v v v ma ma ma v electrical characteristics mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 10a/ms 3. peak off-state voltage v d =400v 10 0 23 57 10 1 160 80 23 57 10 2 120 40 200 240 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 160 120 100 60 20 0 0 51525 40 80 140 10 20 30 30 20 10 40 0 0 510 20 15 25 30 10 ? 10 0 2 3 57 2 3 57 2 3 57 10 1 10 2 10 3 23 5 5 723723 10 4 10 2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.4 2.2 2.0 1.8 1.6 0.0 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 4 4 3 2 60 100 140 ?0 0 40 80 120 10 1 10 3 5 ?0 ?0 20 10 2 5 7 2 3 7 2 3 60 100 140 ?0 0 40 80 120 10 1 10 2 23 57 23 57 23 57 10 3 10 4 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 10 2 v gd = 0.2v p gm = 5w i fgt i i rgt i i rgt iii p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage (t j = t c ) gate trigger voltage (t j = 25 c ) typical example transient thermal impedance ( c/ w) conduction time (cycles at 60hz) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads curves apply regardless of conduction angle allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case)
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 ?0 ?0 ?0 0 20 40 60 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 3 5 7 3 2 5 4 4 7 3 2 ?0 ?0 20 10 2 60 100 140 ?0 0 40 80 120 10 1 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 3 7 5 3 2 10 4 7 5 3 2 10 5 7 5 3 2 10 2 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 160 120 100 60 20 0 25 30 01520 40 80 140 510 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection 60 60 t 2.3 100 100 t 2.3 160 160 t 2.3 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current (t j = t c ) repetitive peak off-state current (t j = 25 c ) typical example junction temperature ( c) 100 (%) holding current (t j = t c ) holding current (t j = 25 c ) holding current vs. junction temperature typical example ih(typ) = 20ma laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage (t j = t c ) breakover voltage (t j = 25 c ) typical example
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 10 1 7 23 5 7 23 5 23 5 10 2 10 3 7 10 4 120 0 20 40 60 80 100 140 6 ? 6 ? 6 ? 6v 6v 6v 330 ? 330 ? 330 ? a v a v a v typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c i fgt i i rgt i i rgt iii typical example gate trigger current vs. gate current pulse width gate trigger pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
mar. 2002 ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type BCR20KM outline drawing dimensions in mm to-220fn application vacuum cleaner, light dimmer, copying machine, other control of motor and heater (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) ................................................................ 20a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # .................................... 20ma v iso ................................................................. 2000v ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 20 200 167 5 0.5 10 2 ?0 ~ +150 ?0 ~ +150 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=110 c 60hz sinewave 1 full cycle, peak value, non-repetitive typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 12 600 720 the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? 2.0 ! @ # ! @ # min. 0.2/0.1 10/1 ma v v v v ma ma ma v electrical characteristics mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type performance curves test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 10a/ms 3. peak off-state voltage v d =400v the product guaranteed maximum junction temperature 150 10 0 23 57 10 1 160 80 23 57 10 2 120 40 200 240 0 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 150 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 160 120 100 60 20 0 0 51525 40 80 140 10 20 30 30 20 10 40 0 0 510 20 15 25 30 10 1 10 0 2 3 57 2 3 57 2 3 57 10 1 10 2 10 3 23 5 5 723723 10 4 10 2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.4 2.2 2.0 1.8 1.6 0.0 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 10 1 10 3 5 60 20 20 10 2 5 7 2 3 7 2 3 60 100 160 140 40 0 40 80 120 10 1 10 2 23 57 23 57 23 57 10 3 10 4 7 5 3 2 10 1 7 5 3 2 10 0 7 5 5 3 2 10 1 60 20 20 60 100 160 140 40 0 40 80 120 gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) v gd = 0.1v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) i fgt i i rgt i i rgt iii typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage (t j = t c ) gate trigger voltage (t j = 25 c ) typical example transient thermal impedance ( c/ w) conduction time (cycles at 60hz) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads curves apply regardless of conduction angle allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case)
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 160 100 80 40 20 0 140 60 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 10 3 7 5 3 2 10 2 10 3 7 5 3 2 10 3 7 5 3 2 5 3 2 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 5.0 4.5 40 80 140 1.0 2.0 3.0 160 120 100 60 20 0 25 30 01520 40 80 140 510 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle resistive, inductive loads 60 60 t 2.3 160 160 t 2.3 100 100 t 2.3 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current (t j = t c ) repetitive peak off-state current (t j = 25 c ) typical example junction temperature ( c) 100 (%) holding current (t j = t c ) holding current (t j = 25 c ) holding current vs. junction temperature typical example ih(typ) = 20ma laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage (t j = t c ) breakover voltage (t j = 25 c ) typical example
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 10 1 23 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 10 1 23 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 i fgt i i rgt i i rgt iii typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 125 c) i quadrant iii quadrant typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 150 c) typical example gate trigger current vs. gate current pulse width gate trigger pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc )
mar. 2002 mitsubishi semiconductor ? triac ? BCR20KM medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 6 ? 6 ? 6 ? 6v 6v 6v 330 ? 330 ? 330 ? a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 load recommended circuit values around the triac

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